Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies.

نویسندگان

  • Tassie K Andersen
  • Seyoung Cook
  • Erika Benda
  • Hawoong Hong
  • Laurence D Marks
  • Dillon D Fong
چکیده

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. The high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO3 oxide perovskites containing elements from both the metalorganic source and a traditional effusion cell.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High dielectrics on InGaAs and GaN - Growth, interfacial structural studies, and surface Fermi level unpinning

1. growth of high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy (MBE) and atomic layer deposition (ALD) 2. structural studies on hetero-structures of nano-thick Al2O3, HfO2, and Ga2O3(Gd2O3)/ InGaAs (and GaN) using high-resolution x-ray reflectivity using in-situ/ex-situ high-resolution synchrotron radiation and high-resolution transmission electron microscopy 3. cor...

متن کامل

A portable ultrahigh vacuum organic molecular beam deposition system for in situ x-ray diffraction measurements

A portable UHV molecular beam deposition system has been developed for synthesis, in situ, and real-time x-ray diffraction measurements of organic thin films, multilayers, and superlattices. The system has been optimized for small size, while still incorporating full features necessary to achieve thin film growth under molecular beam epitaxy ~MBE! conditions. It can be used independently for th...

متن کامل

Two-Dimensional Coarsening Kinetics of Reconstruction Domains: GaAs 001 - 2 4

016101-1 We study the nonconserved coarsening kinetics of a reconstructed semiconductor surface. The domain size evolution is obtained in situ by time-resolved surface x-ray diffraction. The system exhibits four equivalent domain types with two nonequivalent types of domain boundaries. Small domains are prepared by molecular beam epitaxy deposition of one GaAs layer. We find the correlation len...

متن کامل

Surface Electron Microscopy of Ga Droplet Dynamics on GaAs (001)

We describe the design and application of a surface electron microscope which has been constructed to study the in situ growth dynamics occurring on III-V semiconductor surfaces during molecular beam epitaxy. Mirror electron microscopy and photo-emission electron microscopy (PEEM) are used to ellucidate the physics of Langmuir (free) evaporation of GaAs. Of particular interest is the formation ...

متن کامل

Epitaxial silicon grown on CeO2/Si„111... structure by molecular beam epitaxy

Using electron beam evaporation, a Si/CeO2/Si~111! structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rut...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • The Review of scientific instruments

دوره 89 3  شماره 

صفحات  -

تاریخ انتشار 2018